Xue Ma, Chunquan Wang, Guanshu Li, Youtao Song, School of Environment

Guowei Wang, Siyi Li , Jun Wang, College of Chemistry

Abstract: A narrow band-gap NiS semiconductor like “conductive ladder” is inserted between Er³⁺:Y₃Al₅O₁₂@NiGa₂O₄ and Bi₂Sn₂O₇ to accelerate the electron transfer from conduction band of Bi₂Sn₂O₇ to valence band of NiGa₂O₄. Er³⁺:Y₃Al₅O₁₂ as an up-conversion luminescence agent (from visible-light to ultraviolet-light) provides enough ultraviolet-light for satisfying the energy demand of wide band-gap NiGa₂O₄. The prepared Z-scheme Er³⁺:Y₃Al₅O₁₂@NiGa₂O₄/NiS/Bi₂Sn₂O₇ composite exhibits a high and stable photocatalytic activity during conversions of nitrite and sulfite.

Read the article here:   137-Three narrow band-gap semiconductors modified Z-scheme photocatalysts, Er3+Y3Al5O12@NiGa2O4(NiS, CoS2 or MoS2)Bi2Sn2O7, for enhanced solar-light photocatalytic conversions of nitrite and sulfite.pdf